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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Switching Transistor VOLTAGE 32 Volts APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. 2SD1781KPT CURRENT 0.8 Ampere FEATURE * Small surface mounting type. (SOT-23) * Corrector peak current (Max.=1500mA). * Suitable for high packing density. * Low voltage (Max.=32V) . * High saturation current capability. * Voltage controlled small signal switch. SOT-23 .041 (1.05) .033 (0.85) (1) .110 (2.80) .082 (2.10) .066 (1.70) .119 (3.04) (3) CONSTRUCTION * NPN Switching Transistor (2) MARKING * HFE(Q):D9C* HFE(R):NU .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT (1) B C (3) .045 (1.15) .033 (0.85) E (2) .019 (0.50) Dimensions in inches and (millimeters) SOT-23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-3 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current DC peak collector current total power dissipation storage temperature junction temperature CONDITIONS open emitter open base open collector - - - - - Tamb 25 C; note 1 - MIN. MAX. 40 32 5 0.8 1.5 200 +150 150 V V V A A UNIT mW C C -55 - RATING CHARACTERISTIC CURVES ( 2SD1781KPT ) CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL BVCBO BVCEO BV EBO ICBO IEBO hFE VCEsat Cc fT PARAMETER CONDITIONS MIN. 40 32 5 - - 120 - - - - - - 500 500 390 400 10 Typ. 150 Typ. MAX. V V V nA nA UNIT collector-base breakdown voltage IE = 0; IC =-50 uA collector-emitter breakdown voltage IB = 0; IC =-1 mA emitter-base breakdown voltage collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage collector capacitance transition frequency IC = 0; IE =-50 uA IE = 0; VCB = 20 V IC = 0; VEB = 4 V VCE = 3V; note 1 IC = 100 mA IC = 0 mA, IB=50 mA -500 IE = ie = 0; VCB =10 V ; f = 1 MHz IC = 50 mA; VCE = 5 V ; f = 100 MHz mV pF MHz Note 1. Pulse test: tp 300 s; 0.02. 2. hFE: Q Grade: 120~270 R Grade: 180~390 RATING CHARACTERISTIC CURVES ( 2SD1781KPT ) Fig.1 Grounded emittterpropgation characteristics 1000 500 COLLOCTOR CURRENT : IC (mA) Ta=25 C VCE =6V O Fig.2 Grounded emitter output characteristics 400 O T Ta=25 C 1mA 100 50 20 10 5 2 1 0.5 0.2 1 COLLECTOR CURRENT: IC (mA) 900uA 300 800uA 700uA 600uA 200 500uA 400uA 300uA 100 200uA 100uA 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.2 BASE TO EMITTER VOLTAGE: VBE (V) 4 2 6 8 10 0 COLLECTOR TO EMITTER VOLTAGE: VCE (V) Fig.3 DC Current gain vs. collector current 1000 COLLECTOR SATURATION VOLTAGE: VCE (sat) mV VCE =5V Fig.4 Collector-emitter saturation voltage vs. collector current (1) -1000 Ta=25 C O 500 Ta=100 C O DC CURRENT GAIN: hFE 200 25 C -55 C O O -100 IC/IB=50 20 10 100 50 -10 20 10 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT: IC (mA) C -1 -1m -10m -100m -1 COLLECTOR CURRENT: IC (A) RATING CHARACTERISTIC CURVES ( 2SD1781KPT ) Fig.5 Collector-emitter saturation voltage vs. collector current (2) COLLECTOR SATURATION VOLTAGE: VCE (sat) mV 1000 IC/IB=10 Fig.6 Gain bandwidthproduct vs. emitter current 1000 500 TRANSITION FREQUENCY: fT (MHz) Ta=25 C VCE =5V O 500 200 Ta=100 C O 25 C -55OC O 200 100 50 100 50 20 10 20 10 1 2 5 10 20 50 100 200 500 1000 -1 -2 -5 -10 -20 -50 -100 -200 COLLECTOR CURRENT: IC (A) EMITTER CURRENT: IE (mA) Fig.7 Collector output capacitance vs. collector-base voltage 100 COLLECTOR OUTPUT CAPACITANCE:Cob (pF) Ta =25 C f=1MHZ IE=0A O Fig.8 Emitter input capacitance vs. emitter-base voltage Ta =25 C f=1MHZ IC=0A O 200 EMITTER OUTPUT CAPACITANCE:Cib (pF) 50 100 50 20 10 20 10 5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 5 0.1 0.2 0.5 1.0 2.0 5.0 10 COLLECTOR TO BASE VOLTAGE : VCS (V) EMITTER TO BASE VOLTAGE : VEB (V) |
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